Engineers from both companies are seeking to implement 8-Plane 3D NAND and over 300 layers of 3D NAND. The paper (C2-1) from Armor introduces an 8-Plane 1Tb 3D TLC NAND with a stack count of 210 layers and an I/O speed of 3.2GT/s, which is very similar to the 218 layer 1Tb 3D TLC NAND launched by Armor/Western Data and has a 17Gb/mm performance ² Density and 3.2GT/s I/O bus, but it is 8-Plane instead of 4-Plane, and it is said to provide a Program Throughput of 205MB/s and 40 μ The read latency of s is significantly better than that of Armor 128 layer 3D NAND, which is 56 μ S delay.。

 

In addition to studying the 3DNAND structure of 8-Plane, researchers will also submit a paper on 300 layers of 3DNAND (T7-1), High Scalable Metal Induced Lateral Crystal Utilization (MILC) Techniques for Vertical Silicon Channel in Ultra High (300Layers) 3D Flash Memory. The article states that in order to achieve this goal, the two companies plan to use metal induced lateral crystallization (MILC) technology. Through MILC technology, a 14 micron long macaroni like silicon channel is formed in over 300 layers of vertical storage holes. According to reports, this experimental 3D NAND also utilizes cutting-edge nickel absorption methods to eliminate impurities and defects in silicon materials, thereby improving the performance of the unit array.